Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for ...

A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...

A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...

A joint research team led by Professors Donghee Son and Jin-Hong Park at SKKU has developed a stretchable, self-healing, and reconfigurable electronic circuit platform that can autonomously recover ...

June 12, 2003 - Intel Corporation revealed new details of its advanced “tri-gate” transistor design this week at the 2003 Symposia of VLSI Technology and Circuits in Kyoto, Japan and said that the tri ...

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...

The circuit shown is a 3-input Resistor-Transistor Logic (RTL) gate. a. Write the truth table for the input combinations of 0V and 5V with respect to the ground. b. Based on the output from the truth ...

KYOTO, Japan — Intel Corp. researchers have provided a peek at a transistor with a gate length measuring just 20 nanometers, which Intel expects to put into production in 2007 when its microprocessors ...

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Intel has reported a major technological breakthrough in microprocessor development: the world’s first 3D transistor. The Tri-Gate transistor will continue the steady delivery of computing products ...