DUBLIN--(BUSINESS WIRE)--The "GaN-on-Sapphire HEMT Power IC by Power Integrations" report has been added to ResearchAndMarkets.com's offering. The report provides an estimation of the production costs ...

Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...

MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel is launching a new, ruggedized 100V/90A GaN power HEMT (High Electron Mobility Transistor) based on industry-leading technology from GaN Systems.

ROHM product achieves industry-leading device performance metrics among GaN HEMTs in the TOLL package · GlobeNewswire Inc. Santa Clara, CA and Kyoto, Japan, Feb. 27, 2025 (GLOBE NEWSWIRE) -- ROHM ...

Currently available GaN technologies have their shortcomings. These are discussed in the following article followed by the presentation of a novel GaN technology that eliminates these shortcomings.

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...

Innoscience has announced a family of four new integrated devices that combine a GaN HEMT, gate driver, current sense, protection and other functions in a single, industry-standard QFN 6 × 8-mm ...

Electric vehicles, converters for charging infrastructure, energy storage systems, solar and wind power plants or new types of heat pumps — key technologies for the energy transition rely on ...

Innoscience has brought out a range of 650V E-mode GaN HEMT devices. New 190mΩ, 350mΩ and 600mΩ R DS(on) devices in industry-standard 8×8 and 5×6 DFN packages join previously-announced 140mΩ, 240mΩ ...

Research and Markets has announced the addition of the "TransphormTPH3206PSGaN-on-Silicon HEMT: Complete Teardown Analysis" report to their offering. Transphorm's TPH3206PS transistor has a new die ...