DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Wolfspeed CGHV40100 GaN-on-Silicon HEMT: Chip and Module Fabrication Process Overview" report to their offering.

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride ...

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Wolfspeed CGHV40100F RF GaN HEMT: Analysis" report to their offering. Wolfspeed, now Infineon, offers a large range of ...

As the universe of applications for power devices grows, designers are finding that no single semiconductor can cover the full range of voltage and current requirements. Instead, combination circuits ...

Innoscience has brought out a range of 650V E-mode GaN HEMT devices. New 190mΩ, 350mΩ and 600mΩ R DS(on) devices in industry-standard 8×8 and 5×6 DFN packages join previously-announced 140mΩ, 240mΩ ...

Taking gallium nitride power ICs to the next level, researchers at Imec report co-integration of Schottky barrier diodes and high-electron-mobility transistors (HEMTs) on a smart power platform. The ...

Innoscience Technology, which was founded to pursue high performance, cost-effective Gallium Nitride on Silicon (GaN-on-Si) power ICs, has come up with a 40V bi-directional GaN-on-Si enhancement mode ...

Teledyne has added three new devices to its lineup of off-the-shelf, space-screened GaN HEMTs for satellite and other high-reliability applications. The parts go through NASA Level 1 or ESA Class 1 ...

How GaN is used in DC-DC power converters. Challenges and advantages of using GaN semiconductors. When designers need high-voltage to low-voltage DC-DC converter designs, both the input and output ...