NEC Corporation and NEC Electronics Corporation announced the development of a transistor featuring a new gate stack structure using a Hf-based high-k dielectric (*1) and a metal gate electrode (*2), ...
NEC Corp. said today that it has developed a transistor with a new gate stack structure using a hafnium (Hf)-based high-k dielectric and a metal gate electrode. The gate stack satisfies the ...
In the field of semiconductor fabrication, high-k dielectrics represent a class of materials with a dielectric constant significantly higher than traditional silicon dioxide. These materials are ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback