The TSHF5211, an 890-nm infrared emitting diode from Vishay, delivers a typical radiant intensity of 235 mW/sr at a drive current of 100 mA. According to the manufacturer, this represents a 50% ...
MALVERN, Pa., July 17, 2024 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (VSH) is broadening its optoelectronics portfolio with the introduction of a new 890 nm high speed infrared (IR) emitting ...
Vishay Intertechnology, Inc. is broadening its optoelectronics portfolio with the introduction of two new 940 nm high-speed infrared emitting diodes in compact 3.2 mm by 2.51 mm by 1.2 mm clear SMD ...
The development of near-infrared (NIR) light-emitting diodes and phosphors represents a pivotal advancement in photonic technologies, with far‐reaching applications in biomedical imaging, night vision ...
IR sensors rely on an emitter (IR LED) and a detector (photodiode or photoresistor) to measure infrared light and convert it ...
(Nanowerk News) National University of Singapore (NUS) researchers have developed highly efficient, large-area and flexible near-infrared light-emitting diodes (LEDs) for new wearable device ...
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