DURHAM, N.C.--(BUSINESS WIRE)-- Cree, Inc. (NAS: CREE) and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar ...
Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...
A ready-to-use reference platform that helps engineers accelerate the development of efficient mid-power inverter systems ...
Santa Clara, CA and Kyoto, Japan, Jan. 10, 2023 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the adoption of its new fourth generation SiC MOSFETs and gate driver ICs in electric vehicle ...
Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...
Thomas Stierle, CEO E-Mobility Division at Schaeffler (left) and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM A strategic partnership between ROHM and Schaeffler to ...
Later this month, Toshiba will start shipping a 2200V rated SiC MOSFET with embedded Schottky barrier diode (SBD) for use in 1500V DC applications such as photovoltaic (PV) inverters, electric vehicle ...
An impressive peak efficiency of 99.1% is claimed for 50kW a solar inverter made with silicon carbide (SiC) mosfets and diodes from Cree, which claims it is “one-fifth the average size and weight of ...
April 18, 2013. Cree Inc. and Delta Energy Systems have announced the release of Delta’s new generation of solar inverters, which utilize SiC power MOSFETs from Cree. The use of SiC MOSFETs in the ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results