Electronic Design

GaN transistors, power amplifiers debut at IMS

San Francisco, CA. Qorvo at IMS 2016 highlighted several new products and features. The company debuted six new 50-V GaN transistors and said that its QPD1000 15-W GaN on SiC wideband input-matched ...
EDN

Microchip expands GaN RF power portfolio with new MMIC devices

Microchip Technology Inc. recently expanded its gallium nitride (GaN) radio frequency (RF) power device portfolio with new monolithic microwave ICs (MMICs) and discrete transistors that cover ...
Semiconductor Engineering

RF/Microwave EDA Software Design Flow Considerations For PA MMIC Design

In this white paper, a gallium arsenide (GaAs) pseudomorphic high-electron mobility transistor (pHEMT) power amplifier (PA) design approach is examined from a systems perspective. It highlights the ...
EDN

All the Advantages of Using GaN for RF Applications

Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications. Compared to traditional semiconductors (such as silicon), gallium ...